| PART |
Description |
Maker |
| HS9-4424BRH-8 HS9-4424BRH-Q HS9-4424RH HS9-4424RH- |
SWITCH SLIDE DPDT RT ANG L=9MM 辐射加固双，非逆变电源的MOSFET驱动
Radiation Hardened Dual, Non-Inverting
Power MOSFET Drivers(抗辐射双路同相功率MOSFET驱动
Radiation Hardened Dual, Non-Inverting Power MOSFET Drivers
Radiation Hardened Dual/ Non-Inverting Power MOSFET Drivers
|
Intersil, Corp.
Intersil Corporation
|
| IRHM93130 IRHM9130 IRHM9130-15 |
Simple Drive Requirements
RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA)
RADIATION HARDENED POWER MOSFET / 100V, P-CHANNEL
-100V 300kRad Hi-Rel Single P-Channel TID Hardened MOSFET in a TO-254AA package
|
IRF[International Rectifier]
|
| HCTS390MS HCTS390D HCTS390DMSR HCTS390HMSR HCTS390 |
Radiation Hardened Octal Transparent Latch/ Three-State
Radiation Hardened Dual Decade Ripple Counter
|
INTERSIL[Intersil Corporation]
|
| HS-RTX2010 HS-RTX2010RH HS8-RTX2010RH HS9-RTX2010R |
Radiation Hardened Real Time Express??Microcontroller
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, CQFP84
Radiation Hardened Real Time ExpressMicrocontroller 16-BIT, 8 MHz, MICROCONTROLLER, UUC84
Dual J-K Positive-Edge-Triggered Flip-Flops With Clear And Preset 16-SOIC 0 to 70
Radiation Hardened Real Time Express Microcontroller
|
Advanced Analogic Technologies, Inc.
Intersil, Corp.
Intersil Corporation
|
| IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V，P通道表面安装抗辐射功率MOSFET00V的电压，P沟道表贴型抗辐射功率马鞍山场效应管）
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
|
| FSPL230D1 FSPL230F FSPL230F3 FSPL230F4 FSPL230R4 F |
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 9 A, 200 V, 0.17 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSTJ9055R4 FSTJ9055D FSTJ9055D1 FSTJ9055D3 FSTJ905 |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs 62 A, 60 V, 0.023 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRHY57230CMSE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-257AA package
RADIATION HARDENED POWER MOSFET
|
International Rectifier
|
| JANSR2N7498T2 IRHF57230SE |
200V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a TO-205AF package
RADIATION HARDENED POWER MOSFET THRU-HOLE ( TO-39) 抗辐射功率MOSFET的通孔（到39
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| HS-1115RH FN4098 5962F9678501VPA HFA1115IP |
Buffer, Output Limiting, Closed-Loop, 225MHz, 1135V/s, Programmable Gain, Rad-Hard
From old datasheet system
Radiation Hardened, High Speed, Low Power Output Limiting, Closed-Loop-Buffer Amplifier
Radiation Hardened/ High Speed/ Low Power Output Limiting/ Closed-Loop-Buffer Amplifier
Radiation Hardened, High Speed, Low Power
Output Limiting, Closed-Loop-Buffer Amplifier(抗辐射高速、低功耗、输出限定的锁相环缓冲放大器)
|
INTERSIL[Intersil Corporation]
|
